电场下应变层量子阱AlN/GaN(001)的子带结构

Hole Subband of Strained Layer Superlattice AlN/GaN(001) under an Applied Electric Field

采用有效质量理论６带模型，研究了电场下应变层量子阱ＡｌＮ／ＧａＮ（００１）的价带子能带结构．具体计算了价带子能级的色散曲线，分析了电场和应变效应对子能带的影响．还计算了不同电场和不同阱宽的空穴子能级．

The hole subband dispersion of strained layer supperlattice AlN/GaN(001) has been calculated within the 6 band effective mass equation .The hole subband energies under different applied electric field as well as different well width are presented.The effects of the applied electric field and strain are also discussed.