金刚石薄膜的表面金属化及与Ti薄膜的界面扩散反应的AES研究

Study of the Metallization and Interface Reactionbetween Diamond Film and Ti Layer by AES

利用磁控溅射的方法在金刚石薄膜表面沉积了２５０ｎｍ厚的金属Ｔｉ层，通过３００～６００℃的真空热处理，促进了Ｔｉ与金刚石之间的界面扩散反应。利用俄歇电子能谱研究了Ｔｉ／金刚石薄膜界面的结合状态，发现在界面上形成了Ｔｉ的碳化物。并发现Ｔｉ与金刚石薄膜发生了大幅度的界面扩散反应，Ｔｉ元素渗入金刚石层达６００ｎｍ，促进了Ｔｉ与金刚石之间形成良好的化学结合，为获得高性能的金刚石切削工具提供了可能。界面扩散反应动力学的研究表明Ｔｉ／金刚石界面扩散反应的表观活化能为１２．３ｋＪ／ｍｏｌ。过高的热处理温度（高于６００℃）会导致金属Ｔｉ层严重的氧化，不利于界面扩散反应的进行。热处理时间的增加有利于ＴｉＣ的生成。

A Ti layer with a thickness of 250nm was successfully deposited on the surface of a diamond thin film substrate using RF magnetron sputtering techniqueThe interface reaction between Ti and diamond was promoted by vacuum annealing at the range of 300℃to 600℃The Auger profile results showed that the width of interface layer was more than 600nmThe formation of TiC at the interface was confirmed by C KLL line shapeThe chemical reaction suggested that there was strong chemical bond in interface of Ti/diamond,which was an important factor for the high adhesion strength between metal and diamondThis provided the possibility to produce cutting tools with high performanceThe activation energy of the diffusion reaction was 123kJ/molTi layer was seriously oxidized when the annealing temperature reached 600℃To increase annealing time may be a good way to increase the interface reaction