不同温度热硫化纯Fe膜制备FeS_2薄膜的研究

Study on the Formation of FeS_2 Thin Films Prepared by Sulfidationof Fe Layers under Different Temperatures

研究了在硫化压力为８０ｋＰａ、等温２０ｈ条件下，硫化温度对磁控溅射制备的纯Ｆｅ膜反应形成ＦｅＳ２多晶薄膜的影响。结果表明，在４００～６００℃范围内，薄膜中反应生成ＦｅＳ２过程比较充分，尤其在４００℃硫化时，可以获得接近理想化学计量成分的、具有细小均匀组织形态的ＦｅＳ２薄膜。当温度超过４００℃后，ＦｅＳ２晶粒尺寸明显增大，但亚晶尺寸保持恒定。

? Experiments were carried out to prepare polycrystalline FeS2 thin films by thermally sulfurating iron layers.The effect of sulfidation temperature on the formation of the FeS2 thin films has been investigated under constant sulfur pressure and annealing time.Test results indicate that more sufficient crystallzation from iron into polycrystalline FeS2 can occur in the range of 400～600℃.The film sulfurated at 400℃ shows more approximate FeS2 stoichiometrical composition and uniform microstructure than that sulfurated at other experimental temperatures.With the elevation of sulfidation temperature,the grain size of FeS2 crystalline increases but the subgrain size remains constant when the sulfidation temperature is over 400℃.