摘要
This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al203/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MISHEMT）,with Al203 deposited by atomic layer deposition.The results indicated that the gate leakage was decreased two orders of magnitude after the Al203/AlGaN interface was pretreated by N2 plasma.Furthermore,effects of N2 plasma pretreatrnent on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al203 and AlGaN film was improved.
This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al203/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MISHEMT）,with Al203 deposited by atomic layer deposition.The results indicated that the gate leakage was decreased two orders of magnitude after the Al203/AlGaN interface was pretreated by N2 plasma.Furthermore,effects of N2 plasma pretreatrnent on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al203 and AlGaN film was improved.
基金
Project supported by National Advanced Research Program (Grant No 51308030102)
Xi’an Applied Materials Innovation Fund (Grant No XA-AM-200616)
National Natural Science Foundation of China (Grant Nos 60506020 and 60676048)
