氮化铝薄膜的原子层淀积制备及应用

Preparing aluminum nitride thin film by atomic layer deposition

以三甲基铝(TMA)和氨气(NH3)为源,在原子层淀积设备上实现了氮化铝薄膜的制备.通过扫描电子显微镜、X射线能谱仪和原子力显微镜对氮化铝薄膜的生长速率、成分和粗糙度进行了分析,优化了薄膜淀积工艺.以每周期单分子层的生长模式进行氮化铝薄膜淀积,淀积速率为每周期0.205 nm,厚度为61 nm的薄膜粗糙度为0.69 nm.利用原子层淀积氮化铝薄膜的保型性,通过nm级薄膜厚度的控制,制备了复杂的环形光子晶体器件,其工艺精度高达50 nm.

Using a sequential injection of trimethylaluminum （TMA） and ammonia （NH3）, aluminum nitride （A1N） thin films were prepared on silicon wafers by atomic layer deposition （ALD）. The deposition condition was optimized by characterizing the growth rate, atomic percentage and roughness of the thin films with scan electron microscopy （SEM）, energy dispersive spectroscopy （EDS） and atomic force microscopy （AFM） and a unique monomolecular growth mechanism was achieved with growth rate of 0. 205 nm/cycle and roughness of 0.69 nm in 61 nm thick films. Finally, by using the conforreal property of the ALD AlN thin films, nanoscale annular photonic crystals （APC） were fabricated which avoids the challenging electron-beam lithography （EBL） alignment to achieve a process accuracy of 50 nm.