新型相变随机存储器单元仿真系统

Cell simulation system for a new type of phase change random access memory

为研究相变随机存储器（PCRAM）的结构、读写电路及材料等对存储单元读写性能的影响,基于Matlab和Hspice软件,集成读写电路仿真和PCRAM存储元物理仿真,研制了PCRAM存储单元仿真系统.该系统能产生宽度和幅度分别在4～150 ns和0.25～3.00 V之间可调的脉冲,适用于对多种结构存储元进行仿真.边缘接触式结构存储单元仿真结果表明：研制的系统能对存储单元的读、写性能进行评估,并为电路和存储元设计提供数据.

In order to research the effect of structure, circuit and material of phase change random access memory （PCRAM） on the read and write performance, the simulation system of PCRAM cell is researched, which contains circuit simulation and physical simulation, based on Matlah and Hspice. The simulation system is able to produce a series of pulses ranging about 4 ～ 150 ns in width and 0.25～3.00 V in amplitude, and adapts to several structures of PCRAM cell. An edge-contact structure memory cell was simulated and the simulation results demonstrate that the system is able to evaluate the read and write performance of PCRAM cell, and offer data for circuit design and cell design.