摘要
A new thyristor is proposed and realized in the foundry's 0.18-μm CMOS process for electrostatic dis-charge(ESD) protection.Without extra mask layers or process steps, the new ultra-low-voltage-trigger thyristor(ULVT thyristor) has a trigger voltage as low as 6.7 V and an ESD robustness exceeding 50 mA/μm, which enables effective ESD protection.Compared with the traditional medium-voltage-trigger thyristor(MVT thyristor), the new structure not only has a lower trigger voltage, but can also provide better ESD protection under both positive and negative ESD zapping conditions.
A new thyristor is proposed and realized in the foundry's 0.18-μm CMOS process for electrostatic dis-charge(ESD) protection.Without extra mask layers or process steps, the new ultra-low-voltage-trigger thyristor(ULVT thyristor) has a trigger voltage as low as 6.7 V and an ESD robustness exceeding 50 mA/μm, which enables effective ESD protection.Compared with the traditional medium-voltage-trigger thyristor(MVT thyristor), the new structure not only has a lower trigger voltage, but can also provide better ESD protection under both positive and negative ESD zapping conditions.