溅射气压对ZnO透明导电薄膜光电性能的影响

Effects of sputtering pressure on electrical and optical properties of transparent conducting ZnO thin film

采用射频磁控溅射方法,在普通玻璃上制备了具有高度c轴取向的ZnO薄膜,研究了溅射气压(0.2～1.5Pa)对ZnO薄膜的微观结构和光电性能的影响。AFM、XRD、UV-Vis分光光度计及四探针法研究表明:随着溅射气压的增大,ZnO薄膜沿c轴方向的结晶质量提高,晶粒细化,薄膜表面更加致密,晶粒大小更加均匀;ZnO薄膜在400～900nm范围内的平均透过率均高于85%,其中在0.5～1.5Pa范围内其透过率高于90%;样品在高纯氮气气氛中经350℃,300s退火后,电阻率最低达到10-2Ω·cm量级。

ZnO thin films were deposited on glass substrate using the reactive radio-frequency （RF） magnetron sputtering method. The influences of pressure on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV-Vis spectrophoto meter and four-probe method. The experimental results indicate that the crystalline quality of ZnO thin film is improved and the thin film shows higher c-axis orientation with increasing the pressure. The average transparency of ZnO thin films is higher than 85% in the range of 400-900 nm under different pressures, and the average transparency is higher than 90% at the pressure between 0.5M.5 Pa. After annealing at 350℃for 300 s under N2 ambient, the lowest resistivity is 10^2Ω·cm.