Tb掺杂对CoNbZr纳米薄膜软磁性和微波磁性的影响

Effect of Tb doping on soft magnetics and microwave permeability of CoNbZr nanostructural films

采用磁控溅射工艺制备CoNbZrTb纳米薄膜,研究了掺杂稀土元素Tb对薄膜软磁性能、微波磁导率及其频谱特性的影响。结果表明:少量Tb掺杂(<2%,摩尔分数)对该类薄膜的微结构和软磁性能影响较小,薄膜仍可保持非晶态结构和良好的软磁性能,但Tb掺杂可以显著增强薄膜磁谱的弛豫性,从而影响其微波磁导率和磁损耗;随Tb掺杂量的增加,薄膜的磁各向异性场和共振频率得以有效提高;薄膜样品在2GHz处复磁导率的虚部均大于200。掺杂少量Tb的CoNbZrTb非晶态纳米薄膜在109Hz微波段具有较高磁损耗,有望在超薄层吸波材料中获得应用。

CoNbZrTb nanostructural films were synthesized by RF magnetron sputtering. The influences of Tb doping on the soft magnetic capability and microwave complex permeability were investigated. The results show that the microstructure and soft magnetic parameters change little with a little Tb doping, thus, amorphous microstructure and good soft magnetic performance are still kept, but relaxation in the microwave magnetic spectra is strengthened, and the permeability or magnetic loss also change. With increasing Tb content, the magnetic anisotropy field and resonant frequency are improved remarkably. The imaginary part of complex permeability of CoNbZrTb films at 2 GHz are all larger than 200. The nanostructural CoNbZrTb films present large magnetic loss in 109 Hz frequency range. It is possible for these films to be applied in the field of microwave absorption with super thin absorbing layers.