摘要
提出了一个采用TSMC 0.18μmCMOS工艺设计的,工作频段为3.1~5.2GHz的超宽带低噪声放大器。放大器采用了前置带通滤波器的并联负反馈共源共栅结构,并从宽带电路,高频电路器件选择等方面讨论了超宽带低噪声放大器的设计,结果表明,在整个工作频段,电路输入输出匹配S11,S22均小于-14dB,最高增益为15.92dB,增益波动为1.13dB,电路工作电压为1.8V,功耗为27mW,噪声系数NF为1.84~2.11dB。
This paper presents a 3. 1-5.2 GHz ultra-wideband low noise amplifier (LNA) with a band-pass filter in the front of shunt feedback cascode topology fabricated in TSMC 0. 18 μm CMOS process. More efforts are made on the wideband circuit and the choice of device in the high frequency. Consuming 27 mW from a 1.8 V power supply, simulation results show that S11 and S22 of circuit are lower than -14 dB, peak gain is 1.13 dB, flatness of gain is 15. 92 dB and the noise figure of the LNA is from 1.84 dB to 2. 11 dB over a full working band.
出处
《电子器件》
CAS
2009年第3期579-582,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(60771022)
国家863计划资助(2007AA01Z2b1)
江苏省"六大人才高峰计划"资助(06-E-045)
教育部博士点基金资助(20070286002)