Hf:Fe:LN晶体生长与光折变性能的研究

Study on Growth and Photorefractive Properties of Hf:Fe:LN Crystals

原料采用在Fe(0.03%,质量分数)∶LN中掺进摩尔分数为(1%、2%、4%、5%)的HfO2,再次采用提拉法生长Hf∶Fe∶LN晶体。抗光损伤阈值测试表明,Hf(5%,摩尔分数)∶Fe∶LN晶体抗光损伤能力比Hf(1%,摩尔分数)∶Fe∶LN晶体提高2个数量级以上。以二波耦合光路测试晶体的衍射效率,写入时间和擦除时间,并计算出光折变灵敏度和动态范围。结果表明,Hf∶Fe∶LN晶体全息存储性能优于Fe∶LN晶体。

Doping with （1%, 2%, 4%, 5%）（in mole） HfO2 in Fe（0. 03%） ： LN, Hf ： Fe ： LN crystals have been grown by Czochralski method. The optical damage resistance of Hf（5%） ： Fe ： LN crystals is about two orders of magnitude higher than that of Hf（1%） ： Fe ： LN. The diffraction efficiency, writing time and erasure time of crystals were measured by two wave coupling photo-path and the photorefractive sensitivity and dynamic range were calculated. The results show that the holographic storage properties of Hf ： Fe ： LN crystals are superior to Fe ： LN crystals.