β-BZT陶瓷中添加MoO_3及气氛烧结

β-BZT with Addition of MoO_3 and Sintered in Atmospheres

研究了添加低熔点氧化物MoO3及N2/空气/O2气氛烧结对微波介质陶瓷Bi2(Zn1/3Nb2/3)2O7(β-BZT)的结构和介电性能的影响。结果表明,烧结温度可降低100℃;样品的介电常数和品质因数随添加量增多而下降;掺杂MoO3的质量分数小于1%,样品均致密、显微形貌较好;MoO3添加量为0.05%时样品的介电常数约65,电容温度系数仅76×10-6/℃,品质因数值可达943;氧分压对样品的显微形貌和介电性能也有影响。

The structure and dielectric properties of microwave dielectric ceramics Bi2 （Zn1/3 Nb2/3 ）2O7 （β-BZT） doped with different MoO3 concentrations and sintered under the N2/air/O2 atmosphere were studied. The sintering temperature was reduced down about 100℃ with addition of MoOa. The effect of doping on structure and properties was studied in detail. The decrease of dielectric constant and Q with the increase of dopant was observed. The dielectric property of the sample with 0.05% of MoO3 was promising. Following combination of physical properties were obtained： dielectric constant εr≈65, τc= 76 × 10^-6/℃, Q≈943. Sintering atmosphere also affected the grain size and dielectric properties of the ceramics.