栅长90nm的晶格匹配InAlAs/InGaAs/InP HEMT

90nm T-gate Lattice Matched InAlAs/InGaAs/InP HEMTs

文章报道了90nm栅长的晶格匹配InP基HEMT器件。栅图形是通过80kV的电子束直写的,并采用了优化的三层胶工艺。器件做在匹配的InAlAs/InGaAs/InPHEMT材料上。当Vds=1.0V时,两指75μm栅宽器件的本征峰值跨导达到720ms/mm,最大电流密度为500mA/mm,器件的阈值电压为-0.8V,截止频率达到127GHz,最大振荡频率达到152GHz。

We report on the development of a 90-nm gate-length process for millimeter wave lnP HEMTs. The gate patterns were defined using a single electron beam exposure of 80kV and a three-layer resist system. The process was evaluated on matching InAlAs/InGaAs/InP HEMT material. A two-finger, 75 μ m gate-width device showed an extrinsic DC peak transconductance of 720 ms/mm at Vds = 1.0 V, and the threshold voltage of -0.8V. At the same drain bias, the transit frequency and the maximum frequency of oscillation were 127GHz and 152GHz respectively.