脉冲激光沉积法制备ZrW_2O_8薄膜(英文)

GROWTH OF ZrW_2O_8 THIN FILMS BY PULSED LASER DEPOSITION

采用纯ZrW2O8陶瓷靶材,以脉冲激光沉积法在石英基片上沉积并退火处理后制备了ZrW2O8薄膜。利用X射线衍射仪、X射线光电子能谱仪和扫描电子显微镜观察和确定了薄膜结构、化学组分和表面形貌,用划痕仪、表面粗糙轮廓仪测量了薄膜与基片之间的结合力和薄膜厚度。结果表明:脉冲激光沉积的薄膜为非晶态,膜层物质各元素之间的化学计量比与靶材成分一致;衬底未加热沉积的薄膜表面粗糙度较大,衬底温度为650℃时,薄膜表面平滑致密,粗糙度明显降低;非晶膜在1200℃密闭退火热处理3min后淬火得到立方相ZrW2O8薄膜,退火后的薄膜晶粒较大,同时还出现一些沿晶界和晶内的裂纹缺陷,随着退火温度升高,薄膜与基片的结合力降低。

ZrW2O8 thin films were deposited on quartz substrates by pulsed laser deposition using a ZrW2O8 ceramic target and with subsequent annealing. The microstructure, chemical composition and morphology of the ZrW2O8 thin films were observed and determined by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy, and the thickness and cohesion of the films were measured by a surface profilometer and a scratching adhesion tester respectively. The results indicate that the as-deposited ZrW2O8 thin film is an amorphous phase, and the stoichiometry of the film is close to that of the ceramic target, The thin film deposited on the unheated substrate has a large surface roughness; however, the film deposited on the substrate heated at 650℃ is smooth and compact. Cubic ZrW2O8 thin film can be obtained after annealing heat treatment at 1 200℃ for 3 min and then quenching in water, and the film has a large grain size, with some cracks along the grain boundaries and some in the grains. The cohesion of the thin film with substrate decreases with the increase of the heat treatment temperature.