In:Fe:Cu:LiNbO_3晶体光损伤阈值和非挥发性全息存储

OPTICAL DAMAGE THRESHOLD AND NON-VOLATILE HOLOGRAPHIC STORAGE OF In:Fe:Cu:LiNbO_3 CRYSTALS

在LiNbO3(LN)中掺入摩尔分数分别为0,0.25%,1.5%,1.75%的In2O3、质量分数为0.1%的Fe2O3和0.05%的CuO,用提拉法生长了系列In:Fe:Cu:LiNbO3(In:Fe:Cu:LN)晶体。采用Sénarmont补偿法和透射光束图像畸变法,测试In:Fe:Cu:LN晶体的光损伤阈值,基于Scalar表达式,讨论了晶体光损阈值变化的机理。结果表明:3%In:0.1%Fe:0.05%Cu:LN晶体光损伤阈值比LN晶体高2个数量级,3%In3+达到阈值浓度。采用0.1%Fe:0.05%Cu:LN晶体和0.5%In:0.1%Fe:0.05%Cu:LN晶体作为存储介质,Fe2+/Fe3+作为浅能级,Cu+/Cu2+作为深能级,以氪离子激光(蓝光)作开关光,氦-氖激光(红光)作为记录光,完成双光子固定非挥发性存储实验。实验表明:0.5%In:0.1%Fe:0.05%Cu:LN晶体存储记录速度比Mn:Fe:LN晶体提高1个数量级。

In：Fe：Cu：LiNbO3 （LN） series crystals doped with 0, 0.25% （in mole, the same below）, 1.5% and 1.75% In203 and 0.1% （in mass, the same below） Fe203 and 0.05% CuO respectively in LN melt were grown by the Czochralski method. The optical damage thresholds of the crystals were measured using the Senarmont compensation method and the transmitted beam pattern distortion method. The mechanism of optical damage resistance changes is discussed based on the Scalar explanation. The results indicate that the optical damage threshold of the 3% In：0.1% Fe：0.05% Cu：LN crystal is higher by two orders of magnitude than that of the LN crystals, and reaches the maximum threshold. Using the 0.1%Fe：0.05% Cu：LN and 0.5% In：0.1% Fe：0.05% Cu：LN crystals as storage medium, with Fe^2＋/Fe^3＋ providing a shallow energy level, Cu^＋/Cu^2＋ providing a deep energy level, a krypton ion laser （blue light） serving as the gating light and a He-Ne laser （red light） serving as recording light, a two-photon fixing nonvolatile storage experiment was performed. The storage speed of the 0.5% In：0.1% Fe：0.05% Cu：LN crystal is one order of magnitude higher than that of the Mn：Fe：LN crystals.