缺陷层厚度对1维光子晶体孪生缺陷模的影响

Effect of thickness of defect layer on dual defect modes of 1-D photonic crystal

为了研究由1维特定掺杂光子晶体生成的孪生缺陷模与缺陷层厚度的关系,采用特征矩阵的方法进行了理论分析。结果表明,当整体改变这种缺陷层厚度时,孪生缺陷模低频和高频模位置的变化情况各不相同;当仅改变缺陷层的正折射率材料的厚度时,随着厚度增加,孪生缺陷模红移;当仅改变缺陷层负折射率材料的厚度时,随着厚度增加,缺陷模蓝移;并且孪生缺陷模透射率的变化也很复杂。这一结果为设计有特殊用途的光子晶体器件提供了理论依据。

With the eigen matrix method, it analysed the relation between dual defect modes and the thickness of the defect layer in 1-D photonic crystal was analyzed. The results showed that when the thickness of the defect layer was changed totally, the position of dual defect modes at low frequencies was different from that at high frequencies. When the thiekness of the material with positive refractive index was solely increased, the position of dual defect layers was red-shifted. On the contrary, the position was blue-shifted when the thickness of the material with positive reflective index was solely increased. The transmissivity of dual defect modes changed intricately. The property can be used to design some specific ph.otonie devices.