真空蒸发制备ZnTe纳米薄膜

The ZnTe Nano-Thin Film Prepared By Vacuum Evaporation

利用真空蒸发的方法制备ZnTe纳米薄膜,用X射线衍射仪、紫外可见分光光度计对薄膜的物相结构、光学特性进行了测试,用冷热探针、薄膜测厚仪、四探针电阻率测试仪对薄膜导电类型、厚度、折射率和电阻进行了测试。结果表明,当原子配比Zn∶Te=1∶0.7,热处理温度T=500℃时,可制备较理想的ZnTe多晶薄膜,薄膜的择优取向沿(111)晶向,光透射增加,薄膜的光学带隙为2.341eV.薄膜的导电类型为P型。折射率随波长的增加而减小。

ZnTe nano thin films are prepared by vacuum evaporation on glass substrate. The absorbency characteristic , the crystal structure , Type of conduction , Electric resistance, Refrac- tive index and thickness of thin films were studied by X-ray diffraction instrument, ultraviolet-visible spectrophotometer,thin film measure. The result shows that the ZnTe thin films was best when Zn ： Te = 1 ： 0.7 , annealing temperature T = 500℃. Thin films preferred orientation of crystal plane （111） was observed, optical transmission increased, The optical band gap of thin films is 2. 341eV. Type of conduction is P Type. Refractive index of thin film is decreased with wavelength increased evidently.