分散定向碳纳米管阵列的制备及场发射性能

Preparation and field emission properties of aligned carbon nanotube arrays with low density

利用脉冲电化学沉积技术,以NiSO4·6H2O为电镀液在镀Cr硅基片上沉积低密度、直径在150nm左右的Ni催化剂颗粒,在此基础上,采用乙炔、氨气作为气源,采用等离子体增强化学气相沉积(PECVD)技术制备分散定向的碳纳米管阵列。研究了等离子体预处理技术对纳米管制备的影响以及该阵列的场发射性能,证明低密度的碳纳米管阵列阴极能有效地降低场屏蔽效应,进而提高场发射性能,其场发射的开启电场强度约为2.39V/μm。

Using pulse electrochemical deposition methods, the low density nano-particles with diameter about 150 nm of Ni were deposited on silicon wafer coated by Cr in NiSO4 plating solution. Aligned carbon nanotubes were synthesized by plasma enhancement chemical vapor deposition from the gas containing acetylene and ammonia. Pre-etching affection of plasma was also studied. Field emission property was measured for the low density carbon nanotubes arrays, the turn-on electric field strength is about 2.39 V/μm, which shows that the aligned carbon nanotubes with low density can be decreased the screen effect, and enhances the field emission property.