摘要
试建立一种半导体器件数值模拟的新方法并给出理论分析。提出混合元逼近位势方程，以提高电场强度的计算精度。采用Ｌａｐｌａｃｅ修正的向前差分和特征线法对载流子浓度方程施行时间离散近似，并在具有再生核的函数空间中求解。利用再生核函数，得到可显式计算且绝对稳定的计算格式。文中给出近似解的最优阶误差估计。
In this paper, a new numerical method for the simulation of semiconductor devices is devised and analyzed. The electric potential equation is approximated by a mixed element method. The discrete time approximations of the electron and hole density equations are established by using the Laplace modified forward difference and the characteristic method, and are solved in spaces possessing reproducing kernels. By using the reproducing kernel, the explicitly solvable and absolutely stable schemes are formulated. The optimal order error estimates are obtained.
关键词
半导体器件
数值模拟
再生核函数
特征线法
semiconductor equation
reproducing kernel
characteristic method
mixed element method
