SOI LDD MOSFET 的栅电流的模拟

Gate Current Simulation of SOI LDD MOSFET

本文介绍一种采用载流子总量方法分析SOIMOSFET器件特性及热载流子效应的数值模型。使用专用模拟程序LADES7联解器件内部二维泊松方程、电子和空穴的连续性方程。LADES7可用于设计和预测不同工艺条件、几何结构对器件性能的影响。该模型直接将端点电流、端点电压与内部载流子的输运过程联系在一起，可准确地模拟SOIMOSFET器件的特性并给出清晰的内部物理图象。本文给出了LADES7软件模拟的部分结果，并着重讨论了热载流子效应产生的栅电流。

Using total quantity of carrier analysis rnethod, a numerical model for two-dimensional steady state SOI MOSFET is presented. The Poisson equation, the continuity equations for electrons and holes are solved via two dimensional SOI MOSFET simulator LADES7 (Lishan Advance Device Simulation Version no. 7 ).The LADES7 can be used to design and predict the effect of different process conditions and geometric structures of the devices. The terrninal current and terminal voltage of SOI MOSFET and directly related to carrier transport. Base on this model, the behavior of thin SOI MOSFET has been simulated accurately and physical insight has been shown clearly' Some of our simulation results of SOI MOSFET are presented. The gate current produced by hot carriers are discussed in detail.