阴极电弧法定向生长的铜纳米线上沉积非晶碳膜及其场发射特性(英文)

Field emission studies of amorphous carbon deposited on copper nanowires grown by cathodic arc plasma deposition

以阴极电弧法,分别于硅基材与铜纳米线(CuNWs)/硅基材(其中铜纳米线系阳极氧化铝(AAO)模板技术成长于硅基材上)沉积非晶碳膜。分别以扫描电子显微镜(SEM)、原子力电子显微镜(AFM)和X光电子光谱仪(XPS)表征了非晶碳膜/铜纳米线/硅基材与非晶碳膜/硅基材两者之表面形貌、粗糙度、结构及键结等物理特性。并比较两者之电子场发射特性。研究结果显示:两者都拥有低起始电场及高电流密度,其中非晶碳膜/铜纳米线/硅基材的场发射起始电压为3.75V/μm优于非晶碳膜/硅基材的15V/μm,因此非晶碳膜/铜纳米线/硅基材更适用于场发射平面显示器(FED)之发射子,可应用于高稳定性及低成本之场发射平面显示器之研发。

The field emission properties of amorphous carbon/copper nanowire （CuNW）/Si composites have been investigated. The CuNWs （50-80 nm in diameters） were deposited anodically within the pores of a porous anodic aluminum oxide （AAO） nano-template by electrolysis of a CuSO4-H2SOn solution at room temperature using DC current. Two kinds of structure, amorphous carbon/Si and amorphous carbon/CuNWs/Si , were used. Both of them can emit electrons in vacuum towards an anode at a very low turn-on field. Field emission from the amorphous carbon/CuNWs/Si shows a fourfold decrease in turn-on field compared with the amorphous carbon/Si. Results indicated that the electrons were emitted under the effect of an enhanced field because of the geometry of the amorphous carbon sample.