掺杂TGS晶体抑制杂晶方法的研究

Method to restains the emergence of foreign crystals by doped TGS crystals

首次采用二次下晶法，有效地抑制杂晶的出现，加快了晶体生长速率．同时对晶体生长过程中出现的一些问题进行了探讨．将掺杂晶体生长溶液的pH值控制在1～4，可改变掺杂晶体的结晶习性．

The emergence of foreign crystals was restrained effectively by twice seedling method which accelerated the growth velocity of crystals. Problems in the growth process of crystal were analysed. The growth habit of doped crystals could be changed by controlling the pH value of the growth solution in the rounge of 1 -4.