用HW-MWECRCVD系统沉积大面积均匀氢化非晶硅薄膜的研究

INVESTIGATION ON LARGE EVEN HYDROGENATED AMORPHOUS SILICON FILMS DEPOSITED BY HW-MWECR CVD SYSTEM

通过紫外-可见透射谱技术,计算得到薄膜各个位置的拟合厚度值,研究了a-Si∶H薄膜的厚度均匀性;通过对紫外-可见透射谱的分析和对红外吸收谱峰宽度的分析,研究了a-Si∶H薄膜的结构均匀性。研究发现对于单磁场线圈MWECRCVD系统,ECR区的不均匀性和沉积室的磁场梯度的不均匀,是影响a-Si∶H薄膜均匀性的主要原因。通过改进矩形耦合波导和热丝辅助及减小磁场线圈电流的方法,采用HW-MWECRCVD系统,在直径为6cm的衬底上沉积了厚度不均匀性<3.5%的a-Si∶H薄膜。

In this article, using UV-visible transmission spectrum technology to calculate the fitting thickness of every position on the film we investigated the thickness unevenness and using transmission spectrum and width of IR absorption peaks technology we studied the structure unevenness. It was found that the uneven ECR zone and magnetic field gradient are the pdmary factors affecting the uniformity of films for the single magnetic field coil MWECR CVD system. By adopting the way of improving the rectangle-coupling waveguide and decreasing magnetic field coil current, under the hot-wire-assisted system, we deposited the a-Si：H films with thickness uniformity of less than 3.5% above the substrate whose diameter is 6cm.