直流磁控溅射法制备单一相高质量β-FeSi_2薄膜

HIGH QUALITY SINGLE-PHASE β-FeSi_2 THIN FILMS PREPARED BY DC-MAGNETRON SPUTTERING

报道了在单晶Si(100)衬底上,采用室温直流磁控溅射Fe-Si组合靶的方法,并经过后续气氛退火来制备β-FeSi_2薄膜的结果。主要研究了退火时间、退火温度等实验条件对样品结构特性、光学特性和电学特性的影响,制备出了单一相高质量的β-FeSi_2薄膜。霍尔测试表明未掺杂薄膜是P型导电的,载流子浓度5.747×10^(16)cm^(-3),空穴迁移率168cm^2/Vs。由反射-透射法得到薄膜的禁带宽度为0.879eV,吸收系数在光子能量为1.0eV时达到了1.42×10~5cm^(-1)。基于以上优异的光电性能,β-FeSi_2薄膜可望用作太阳电池的有源层。

This paper presents our recent research results of fabrication and characterization of β-FeSi2 thin films on Si （100） substrates by DC-magnetron sputtering Fe-Si mixed targets at room temperature, following post-processing. The in- fluence of annealing temperature and annealing time on the structural, optical and electrical properties of β-FeSi2 films has been studied in detail. By optimizing the experimental conditions, single-phase P-type β-FeSi2 thin films have been successfully deposited with hole concentration as low as 5. 747×10^16cm^-3 , mobility 168cm^2/Vs. The reflectance and transmittance measurements demonstrate a direct band-gap about 0. 879eV, and an absorption coefficient as high as 1.42×10^4cm^-1 at the photon energy about 1.0eV. Due to the above optical and electrical properties, β-FeSi2 is an interesting thin film material for solar cell.