摘要
Heteroepitaxial growth of SiC on n-Si（111） substrates is performed by a low pressure chemicaJ vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000℃ and the carbonized time of 5 min. Under these optimized carbonization conditions, thick epitaxial films of about 15 μm with good crystalline quality and low residual strain can be obtained.
Heteroepitaxial growth of SiC on n-Si（111） substrates is performed by a low pressure chemicaJ vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000℃ and the carbonized time of 5 min. Under these optimized carbonization conditions, thick epitaxial films of about 15 μm with good crystalline quality and low residual strain can be obtained.
基金
Supported by the National Natural Science Foundation of China under Grant No 60876061, Pre-research Foundation under Grant No 9140A08050508, and Shaannxi 13115 Innovation Engineering under Grant No 2008ZDKG-302.
