摘要
An epitaxial graphene （EG） layer is successfully grown on a Si-terminated 6H-SiC （（9001） substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by reflection high energy diffraction （RHEED）, Raman spectroscopy and atomic force microscopy （AFM）. Graphene diffraction streaks can are clearly observed in the Raman spectrum. The AFM about 4-10 layers. be seen in RHEED. The G and 2D peaks of graphene results show that the graphene nominal thickness is
An epitaxial graphene （EG） layer is successfully grown on a Si-terminated 6H-SiC （（9001） substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by reflection high energy diffraction （RHEED）, Raman spectroscopy and atomic force microscopy （AFM）. Graphene diffraction streaks can are clearly observed in the Raman spectrum. The AFM about 4-10 layers. be seen in RHEED. The G and 2D peaks of graphene results show that the graphene nominal thickness is
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50872128 and 50802053.
