SiO_2薄膜制备的现行方法综述

Review on current methods of SiO_2 thin film preparation

在导电基体上制作薄膜传感器的过程中,需要在基体与薄膜电极之间沉积一层绝缘膜。二氧化硅薄膜具有良好的绝缘性能,并且稳定性好,膜层牢固,长期使用温度可达1000℃以上,应用十分广泛。通常制备SiO2薄膜的现行方法主要有磁控溅射、离子束溅射、化学气相沉积、热氧化法、凝胶-溶胶法等。本文系统阐述了各种方法的基本原理、特点及适用场合,并对这些方法做了比较。

In the preparation process of thin film sensor on conductive substrate, it is necessary to deposit a layer of insulating film between the thin film electrode and substrate. In this regard the SiO2 thin films have been widely applying to the sensors of such type because of their excellent insulating property, high stability, high bonding strength and long-time working temperature available to be over 1000℃. Describes systematically the main existing processes of preparing SiO2 thin films, including magnetron sputtering, ion beam sputtering, chemical vapor deposition, thermal oxidation and sol-gel method. Discussing the basic principles, characteristics and scope of applications of these methods, they are compared with each other.