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4·2GHz CMOS射频前端电路设计 被引量：4

Design of 4.2 GHz CMOS RF Front-end
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摘要 设计并实现了一个工作在4.2 GHz的全集成CMOS射频前端电路,包括可实现单端输入到差分输出变换的低噪声放大器和电流注入型Gilbert有源双平衡混频器。电路采用SMIC0.18μm RF工艺。测试结果表明,在1.8 V电源电压下,电路的功率增益可达到26 dB,1 dB压缩点为-27 dBm,电路总功耗(含Buffer)为21 mA。 A 4. 2 GHz fully integrated CMOS RF front-end was designed and implemented. The circuit contains low noise amplifier （LNA） for single-end-input/differential-output conversion and a Gilbert double-balanced mixer. This front-end circuit was implemented in SMIC＇s 0.18μm RF technology. Test results showed that, with 1.8 V supply voltage, the circuit had a power gain of 26 dB, -27 dBm compression point at 1 dB and total power （including buffer） of 21 mA.
作者 丘聪 叶青 叶甜春 范军
机构地区 中国科学院微电子研究所
出处 《微电子学》 CAS CSCD 北大核心 2009年第4期532-535,共4页 Microelectronics
关键词 超外差接收机 射频前端 低噪声放大器 混频器 Superheterodyne receiver RF front-end Low noise amplifier Mixer
分类号 TN773 [电子电信—电路与系统] TN722.3 [电子电信—电路与系统]
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参考文献7

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二级参考文献11

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共引文献5

同被引文献26

  • 1王静光,王金菊,黄煜梅,沈维伦,洪志良.一种优化的射频接收前端电路[J].微电子学,2006,36(2):209-212. 被引量：6
  • 2唐学锋,王文骐,詹福春,徐亮.CMOS蓝牙接收机前端的设计[J].微电子学,2006,36(2):237-240. 被引量：2
  • 3许永生,游淑珍,俞惠,李小进,石春琦,赖宗声.一种低噪声高线性度射频前端电路设计[J].固体电子学研究与进展,2006,26(2):188-193. 被引量：4
  • 4LOU S,LUONG H C.A linearization technique for RF receiver front-end using second-order-intermodulation injection[C] // Proc IEEE Asian Sol Sta Circ Conf.2007:87-90.
  • 5ZHOU S,CHANG M.A CMOS passive mixer with low flicker noise for low-power direct-conversion receiver[J].IEEE J Sol Sta Circ,2005,40(5):1084-1093.
  • 6KIM T W,KIM B,LEE K.Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors[J].IEEE J Sol Sta Circ,2004,39(1):223-229.
  • 7YU C,YUAN J S.Linearity and power optimization of a microwave CMOS Gilbert cell mixer[C] // IEEE Elec Dev for Microw and Optoelec Appl.Estoril.2003:234-239.
  • 8SHAEFFER D K, LEE T H. A 1. 5-V, 1. 5-GHz CMOS low noise amplifier[J]. IEEE J Sol Sta Circ, 1997, 32(5): 745-759.
  • 9GOO J S, AHH H T, LADWIG D J, et al. A noise optimization technique for integrated low-noise ampli- fiers [J]. IEEE J Sol Sta Circ, 2002, 37(8): 994- 1001.
  • 10GANESAN S, SANCHEZ-SINENC10 E, SILVA- MARTINEZ J. A highly linear low-noise amplifier [J]. IEEE Trans Microwave Theo Tech, 2006, 54 (12) : 4079-4085.

引证文献4

二级引证文献6

微电子学
2009年 第4期

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