摘要
在各种新型非挥发性存储器中,阻变存储器(RRAM)具有成为下一代存储器的潜力。介绍了RRAM器件的基本结构,分类总结了常用的材料以及制备工艺,对RRAM阵列的集成方案进行了比较,并讨论了目前存在的问题;最后,对RRAM的研究趋势进行了展望。
Resistive random access memory （RRAM） is one of the most promising candidates for next generation of non-volatile memory. The basic structure of RRAM was described. Resistive switching materials and electrodes for RRAM were summarized, and their fabrication technologies were reviewed. Different techniques for integration of RRAM array were discussed and existing problems were analyzed. And finally, the research trend of RRAM was discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第4期546-551,共6页
Microelectronics
基金
国家高技术研究发展(863)计划基金资助项目(2008AA031403)
国家重点基础研究发展(973)计划基金资助项目(2006CB302706)
国家自然科学基金资助项目(60825403
90607022
60506005)
关键词
非挥发性存储器
阻变存储器
电阻转变
Non-volatile memory
Resistive random access memory （RRAM）
Resistive switching
