摘要
为了改善功率器件导通电阻与击穿电压的折中关系,提出了半超结理论及其设计方法。在原胞部分研究了各个器件结构参数的深度和浓度的优化,在终端部分提出了一种平面结终端技术;提出了实现半超结VDMOS的工艺实现方法,并利用2-D仿真软件Medici进行仿真验证。结果表明,利用该优化方案,可以得到特征导通电阻为40 mΩ.cm2的600 V半超结VDMOS器件。
To improve the trade-off between breakdown voltage and on-resistance of power devices, semi-superjunction MOS was proposed. The optimization of doping density and thickness of structural parameters in the cell was studied. A planar junction terminal technique was proposed in the termination. And a process to implement the semi-superjunction VDMOS was verified through 2-D TMA MEDICI simulation. Results showed that, with this optimized design, semi-superjunction VDMOS featuring high breakdown voltage of 600 V and specific on-resistance of 40 mΩ · cm2 could he realized.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第4期584-587,共4页
Microelectronics
关键词
功率器件
终端技术
半超结
电压支持层
Power device
Termination
Semi-superjunction
Bottom assist laver
