添加V_2O_5对Ba(Mg_(1/3)Ta_(2/3))O_3烧结及微波介电性能的影响

Influence of V_2O_5 on the Sinterability and Microwave Dielectric Properties of Ba(Mg_(1/3)Ta_(2/3))O_3

本工作就添加V2O5对Ba（Mg1／3Ta2／3）O3烧结性及微波介电性能的影响进行了研究和讨论．实验结果发现，添加少量V2O5能明显改善BMT陶瓷的烧结性，当V2O5的添加量为0．1mol％时，烧结体密度可达理论密度的98％同时较纯BMT陶瓷烧结温度降低150℃左右．此时样品仍具有较高的微波介电性能：Q·f＝62450GHz；εγ＝25．

The influence of the addition of V2O5 on the sinterability and microwave dielectric properties of BMT ceramic was investigated. It was found that the sinterability of BMT could be improved greatly by the addition of small amount of V2O5. A dense BMT ceramic with 98% relative density could be obtained with the addition of 0.1mol% V2O5. The dielectric constant and unloaded Q. f value are 25 and 62450 GHz respectively.