对向靶磁控溅射纳米氧化钒薄膜的热氧化处理

Thermal Oxidation Annealing on Nanovanadium Oxide Thin Film Deposited by Direct Current Facing Targets Magnetron Sputtering

采用直流对向靶磁控溅射方法制备低价态纳米氧化钒薄膜，研究热氧化处理温度和时间对氧化钒薄膜的组分、结构和电阻温度特性的影响采用X射线光电子能谱（XPS）、X射线衍射（XRD）和原子力显微镜（AFM）对氧化钒薄膜的组分、结晶结构和微观形貌进行分析，利用热敏感系统对薄膜的电阻温度特性进行测量．结果表明，经300～360℃热处理后，氧化钒薄膜的组分逐渐由V2O3和VO向VO2转变，薄膜由非晶态变为单斜金红石结构，具有金属半导体相变性能；增加热处理温度后，颗粒尺寸由20nm增大为100nm，薄膜表面变得致密，阻碍氧与低价态氧化钒的进一步反应，薄膜内VO2组分舍量的改变量不大；增加热处理时间后，薄膜内VO2组分的含量明显增加，相变幅度超过2个数量级.

In order to study the effects of thermal oxidation annealing temperature and time on nano vanadium oxide thin films,low valence vanadium oxide thin films were deposited on SiO2/Si substrate by DC facing targets reactive magnetron sputtering. X-ray photoelectron spectroscopy （XPS） ,atom force microscope （AFM） and X-ray diffraction （XRD） technique were employed to study and analyze the phase composition.surface morphology and structure of crystalline units of the thin films ,the heat sensitive system was employed to measure the resistance-temperature coefficient of the thin films. The results reveal that the phase composition of thin film changed gradually from noncrystalline V2O3 and VO to monoclinic rutile VO2 when it was annealed at 300 ℃ and 360 ℃ ,which made metal-semiconductor phase transition. The size of particle increased from 20 nm to 100 nm after increasing the annealing temperature. The grains on surface are compact after annealed at 360 ℃ and it prevents oxygen infiltration to oxidate low valence VO, thin films. When increasing thermal annealing time,the content of VO2 in thin films obviously increase,and the magnitude of metal-semiconductor transition is more than 2.