摘要
采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜,在氮气气氛下热处理获得二氧化钒薄膜.利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响,利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析.结果表明,所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主,经400℃、2h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜,提高热处理温度至450℃,纳米结构VO2薄膜的晶粒尺寸减小.FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99,高温关闭状态下透射率接近0.小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.
Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (PT-IR) spectroscopy. The results showed that the asdeposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal futile VO2. After annealing at 400℃ for 2 h, the mixed phase vanadium oxide (VO2) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic ruffle structure. When increasing the temperature to 45℃, nano VO2 thin films with smaller grains were obtained. Fr-IR results showed that the transmission contrast factor of the nano VOz thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2009年第8期1523-1529,共7页
Acta Physico-Chimica Sinica
基金
国家高技术研究发展计划(863)项目(2008AA031401)
国家自然科学基金(60771019)
天津市应用基础及前沿技术研究重点项目(08JCZDJC17500)资助~~
关键词
双离子束溅射
纳米二氧化钒薄膜
透射率
Dual ion beam sputtering
Nano-vanadium dioxide thin film
Transmission