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DAC垫片孔侧壁绝缘程度对电导率测量结果的影响

The gasket conducting effect in diamond anvil cell during electrical measurement
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摘要 通过有限元方法,计算了DAC内垫片孔侧壁与样品发生不同程度短路的情况下,范德堡法测量样品电阻率的相对误差.发现垫片孔侧壁与样品短路面积小于20%时,相对误差可以控制在10%以内.而当短路面积超过25%时,相对误差迅速增大.研究中还发现,电极越靠近样品边缘,相对误差越小. Using Finite Analysis Method, relative error of van der Pauw mode in electrical resistivity measuring were calculated in situation of varying area of electrical short between the sample and the inside wall of the gasket. It is revealed that if the shortened area is less then 20M, the relative error is smaller than 10%. After the shortened area exceeded 25M, the relative error increasing vary fast. It is also discovered that the more the electrode is near to the edge of the sample, the smaller the relative error is.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2009年第4期733-736,共4页 Journal of Atomic and Molecular Physics
基金 国家自然科学基金(10874053 50532020) 科技部973课题(2005CB724404) 教育部创新团队(IRT0625)
关键词 金刚石对顶砧 高压 电阻率 范德堡法 diamond anvil cell, electrical measurement, high pressure, electrical resistivity
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参考文献12

  • 1Shimizu K, Ishikawa H, Takao D, et al. Superconductivity in compressed lithium at 20 K[J]. Nature, 2002, 149: 597.
  • 2Eremets M I, Struzhkin V W, Mao H K, et al. Superconductivity in boron[J]. Science, 2001, 293:272.
  • 3Shimizu K, Suhara K, Ikumo M, et al. Superconductivity in oxygen[J]. Nature,1998, 393 : 767.
  • 4Eremets M I, Shimizu K, Kobayashi T C, et al. Metallic CsI at pressures of up to 220 gigapascals[J]. Science, 1998, 281: 1333.
  • 5Mao H K, Bell P M. Electrical resistivity measurements of conductors in the diamond-window, highpressure cell[J]. Rev. Sci. Instrum., 1981, 52:615.
  • 6Sakai N, Kajiwara T, Tsuji K, et al. Electrical resistance measurements at high pressure and low temperature using a diamond-anvil cell[J], Rev. Sci.Instrum. , 1982, 53:499.
  • 7Weir S T, Akella J, Araene-Ruddle C, et al. Epitaxial diamond encapsulation of metal microprobes for high pressure experiments[J]. Appl. Phys. Lett., 2000, 77:3400.
  • 8Patterson J R, Aracne C M, Jackson D D, et al. Pressure-induced metallization of the mott insulator MnO[J]. Phys. Rev. B, 2004, 69: 220101.
  • 9Gao C X, Han Y H, Ma Y Z, et al. Accurate measurements of high pressure resistivity in a diamond anvil cell [J]. Rev. Sci. Instrum. , 2005, 76: 083912.
  • 10Han Y H, Gao C X, Ma Y Z, et al, Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement [J]. Appl. Phys. Lett., 2005, 86. 064104.

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