摘要
制备了纳米VO2多晶薄膜材料,其相变温度为35℃,实验测量了它的电阻-温度(R-T)曲线和热滞回线,并用随机阻抗网络模型进行了R-T曲线和热滞回线模拟,两者显示出结果一致,表明在低温相变温度35℃下,随机阻抗网络模型适用于纳米VO2多晶薄膜R-T曲线和热滞回线。此外,给出了VO2多晶材料在半导体区和金属区的简化随机阻抗网络模型的电阻公式。
Nano-VO2 polycrystalline thin films with the phase transition temperature of 35 ℃ were fabricated. The R-T curve and thermal hysteresis loop were experimentally measured, and were theoretically simulated by using random resistor network （RRN） model. Both measured and simulated results are completely consistent, showing the applicability of RRN model for the R-T curve and thermal hysteresis loop at the phase transition temperature of 35 ℃. In addition, the resistance expressions for VO2 polycrystalline materials at both semiconductor and metal regions are presented.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第4期571-573,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目(60671004)
