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氧压与ZnO薄膜发光特性的关系研究 被引量:1

Effects of Oxygen Pressure on Optical Properties of ZnO Thin Films
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摘要 在不同的环境氧压下用脉冲激光沉积方法在Si(111)衬底上生长了ZnO薄膜,以325 nm He-Cd激光器为激发源获得了薄膜的荧光光谱以研究其发光特性,用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了薄膜的晶体结构和表面形貌,结果表明氧压在20 Pa和50Pa之间制备的ZnO薄膜具有良好的紫外发光特性和较好的晶体质量。分析了ZnO薄膜的发光机理,认为薄膜紫外峰源自自由激子复合发光,绿光峰的发光机制与锌位氧OZn关系密切,氧空位是蓝光发射的重要原因。 ZnO thin films were grown on Si (111) substrates with pulsed laser deposition (PLD) method at various oxygen pressures and their structural and optical properties were investaged. The optical properties of the films were studied by analyzing the photoluminescence spectra gained by using a 325 nm He-Cd laser as the excitaton source. The structural and morphological properties of the films were investigated by XRD and AFM measurements, respectively. The results suggest that films grown under the oxygen pressure of 20-50 Pa have excellent UV emission and high-quality crystallinity. The analysis of PL spectra indicates that UV emission is due to excitonic combination, the green band is due to the replacement of Zn in the crystal lattice for O and the blue band is due to the O vacancies.
出处 《半导体光电》 CAS CSCD 北大核心 2009年第4期574-577,共4页 Semiconductor Optoelectronics
基金 辽宁省教育厅科研基金项目(20060661) 沈阳航空工业学院博士启动基金项目(06yb28)
关键词 ZNO薄膜 氧压 发光特性 发光机理 ZnO thin film oxygen pressure optical properties optical mechanism
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参考文献9

  • 1Sang B,Yamada A, Konagai M. High stable ZnO thin films by atomic layer deposition[J]. Jpn. J. Appl. Phys. , 1998,37 (2B) : L206-L208.
  • 2Verardi P, Nastase N,Gherasim C,et al. Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices [J]. J. Crystal Growth, 1999,197(2) :523-527.
  • 3Zu P, Tang Z K, Wong G K L, et al. Ulraviolet spontaneous and stimulated emissions from ZnO mierocrystallite thin films at room temperature[J]. Solid State Commum. , 1997,103(8) :459-463.
  • 4Reynolds D C,Look D C, Jobai B, et al. Neutral-donor bound-exciton complexes in ZnO crystals [J]. Phys. Rev. B, 1998,57(19):12151-12155.
  • 5Garces N Y,Wang L, Bai L, et al. Role of Copper in the Green Luminescence from ZnO Crystals[J]. Appl. Phys. Lett., 2002,81(4) :622-624.
  • 6Wang Zhaoyang, Hu Lizhong, Zhao Jie,et al. Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD[J]. Vacuum, 2005, 78 (I) :53-57.
  • 7Kim S S,Lee B T. Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001) [J]. Thin Solid Films,2004,446(2) :307-312.
  • 8徐彭寿,孙玉明,施朝淑,徐法强,潘海斌.Electronic structure of ZnO and its defects[J].Science China Mathematics,2001,44(9):1174-1181. 被引量:15
  • 9Wang QP, Zhang D H, Xue Z Y, et al. Violet luminescence emitted from ZnO films deposited on Si substrate by rf magnetron sputtering [J]. Appl. Surface Science, 2002,201 (1/4) : 123-128.

二级参考文献3

  • 1Savrasov,S. Y.Linear-response theory and lattice dynamics: a muffin-tin-orbital approach, Phys[].RevB.1996
  • 2Kasai,P. H.Electron spin resonance studies of donors and acceptors in ZnO, Phys[].Review.1963
  • 3Service,R. F.Will UV laser beat the blues[].Science.1997

共引文献14

同被引文献12

  • 1Ozgur U, Alivov Y 1, Liu C, et al. A Comprehensive Review of ZnO Materials and Devices[ J ]. J. Appl. Phys. ,2005, 98:041301.
  • 2Janotti A, VandeWalle C G. Fundamentals of Zinc Oxide as a Semiconductor[ J ]. Rep. Prog. Phys. ,2009,72 : 126501.
  • 3Wu K Y, Fang Q Q, Wang W N, et al. On the Origin of an Additional Ranmn Mode at 275 cm-1 in N-doped ZnO Thin Fihns[ J]. J. Appl Phys. ,2012,111:063530.
  • 4Wu K Y, Fang Q Q, Wang W N, et al. Influence of Nitrogen on the Defects and Magnetism of ZnO: N Thin Films[ J]. J. Appl. Phys. ,2010 108:063530.
  • 5Zeng H B, Cai W P. Violet Photoluminescence From Shell Layer of Zn/ZnO Core-Shell Nanoparticles Induced by Laser Ablation[ J]. Appl. Phys Lett. ,2006,88:171910.
  • 6Limpijunmong S, Li X, Wei S H, et al. Substitutional Diatomic Molecules NO, NC, CO, and: Their Vibrational Frequencies and Effects on Doping of ZnO[ J]. Appl. Phys. Lett. ,2005,86:211910.
  • 7Nickel N H, Gluba M A, Defects in Compound Semiconductors Caused by Molecular Nitrogen[ J]. Phys. Rev. Lett. ,2009,103:145501.
  • 8曹培江,林传强,曾玉祥,柳文军,贾芳,朱德亮,马晓翠,吕有明.氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响[J].发光学报,2010,31(2):239-242. 被引量:7
  • 9田力,陈姗,蒋马蹄,廉淑华,唐世洪.衬底温度对Al_2O_3掺杂ZnO透明导电薄膜性能的影响[J].电子元件与材料,2011,30(10):23-26. 被引量:5
  • 10朱慧群,李毅,丁瑞钦,王忆,黄洁芳,张锐华.p-ZnO薄膜及其异质结的光电性质[J].人工晶体学报,2012,41(3):636-641. 被引量:4

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