摘要
一维氧化镓半导体材料在光电子器件、发光材料、气体敏感器等方面有着广泛的应用前景而成为了当今纳米材料中研究的热点。本文主要介绍了用溶胶-凝胶法和水热法合成前躯体,并用高温固相法烧结后合成了单斜相β-Ga2O3纳米半导体材料,通过XRD,SEM等材料表征手段对两种方法合成出的样品进行物相分析、形貌和结构的测试,并且研究具有不同形貌Ga2O3的光致发光性质。
The fabrication of Nanometer-sized Ga203 semiconductor has attracted considerable attentions due to the potential use in optoelectronic devices, phosphors, gas-sensors etc. In this paper, The precursor of Ga203 was synthesised through sol - gel and hydrothermal methods, respectively. Thenβ- Ga2O3 was obtained by the high - temperature solid reaction. These semiconductors have been investigated in details by X - ray powder diffraction （XRD）, scanning electron microscopy （SEM） and the photoluminescence excitation and emission spectra.
出处
《广州化工》
CAS
2009年第5期138-139,共2页
GuangZhou Chemical Industry
