ZnO压电薄膜及其SAW滤波器的制备及性能研究

C-axis Oriented ZnO Piezoelectric thin Film Prepared by RF Magnetron Sputtering for saw Filters

采用磁控溅射方法在Pt/Ti/SiO2/Si衬底上制备了晶化良好的(002)取向的ZnO薄膜,用XRD、SEM表征薄膜的取向和显微结构。在ZnO薄膜上利用剥离技术制备了波长40μm的Al叉指电极,电极厚度约为200nm,并利用矢量网络分析仪测量了ZnO薄膜声表面波特性,结果显示:声表面波中心频率为146.8MHz,声表面波在ZnO薄膜上的传播速度为5872m/s。

WeU-crystallized ZnO thin film with high （002） orientation was prepared by RF magnetron sputtering on Pt/Ti/SiO2/Si substrates. Interdigital transducer （IDT） electrode with 40μm wavelength was fabricated by lift-off method based on photolithograph techniques. The thickness of the Al electrode was about 200nm. The orientation of the film was studied using X-ray diffraction. The surface morphology was investigated using scanning electron microscopy （SEM）. SAW filter was measured by Network Analyzer. The center frequency of the filter is 146.8MHz, the acoustic velocity is 5872m/s.