多孔硅光致发光的温度效应研究

STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON

通过对多孔硅光致发光峰随测量温度变化的研究，发现随测量温度的下降，光致发光峰位有两种截然不同的移动方向：发光峰中心波长较长的样品，主峰向低能方向移动（即红移）；而发光峰位波长较短的样品则向高能方向移动（即蓝移）．根据多孔硅光致发光峰的温度效应，定性地给出了发光效率随波长变化的模拟曲线，并由此能较好地解释多孔硅光致发光峰位随温度变化而移动的实验现象．

Abstract The temperature dependence of photoluminescence (PL) in porous silicon has been investigated. It is found that the PL peak from the low porosity samples shows a red shift with decreasing temperature, but the blue shift of the PL peak is always observed in the high porosity samples. The temperature dependence of the PL peak shift observed experimentally can be qualitatively explained by the simulated curves of the luminescent efficiency versus wavelength.