中子辐照直拉硅退火后的施主行为

^Behavior of irradiation donor(ID) aRer annealing in neutron transmutation doping czochralski grown silicon

利用多种实验手段对中子辐照直拉硅退火过程中特有的施主效应进行了研究；探讨了不同中子辐照注量以及氧对施主形成的影响；报道了低于７５０℃热处理所产生的“施主平台”现象。崐实验结果表明，该施主在禁带中产生～４３ＭｅＶ的浅施主能级，它的结构为辊照缺陷与硅、二氧化硅以及碳等组成的亚稳态络合物，其电活性起源于硅和二氧化硅沉淀的界面态。

Behavior of the irradiation donor(ID) after annealing in NTDCZSi has been studied by using various kinds of experimental means and the effect of neutron doses and oxygen concentration on the formation of ID is discussed. The donor plateau generated in heat treatment below 750℃is reported for the first time. The results show that ID produces a shallow donor energy level (- 43meV) in the forbidden band. Its electric activity originates from the interface state of Si/SiOz precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon.