摘要
X射线低角反射实验技术是测定固体材料表层中杂质原子深度分布的有效手段.利用同步辐射X射线反射技术和近年来发展的由反射实验数据逆向求解原子深度分布的分层逼近法,研究了不同温度下分子束外延生长的δ掺杂(Sb)Si晶体样品,成功地测量了样品中几个纳米范围内的Sb原子深度分布.所得结果表明,300℃以下是用分子束外延方法在Si晶体中生长Sb原子δ掺杂结构的合适温度.
X-Ray Low-angle reflection is an effective method for detecting the atomic depth distribution of impurity near the crystal surface. Using the synchrotron radiation X-ray reflection technique and the groove-tracking method, the recently devoloped inversion analysis method for atomic distribution, a series of δ-doped(Sb) Si crystal samples grown at different temperatures by molecular beam epitaxy (MBE) were studied. The atomic distributions of Sb atoms within nanometer scale in the samples were obtained successfully. The experimental results indicate that temperatures below 300℃ are the suitable growth temperatures for Sb δ-doping in Si crystals by MBE.
出处
《理化检验（物理分册）》
CAS
1998年第8期3-8,共6页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
国家自然科学基金资助课题(项目编号:19674058)
