新型薄膜窄带隙光伏材料β-FeSi_2的研究进展

Research Progress of β-FeSi_2 Thin Films as Novel Photovoltaic Materials

环境友好半导体薄膜材料β-FeSi_2具有0.85 eV的直接带隙结构、吸收系数大、对太阳光谱利用范围宽、原材料丰富、稳定性好等优点,被认为是一种非常有前途的窄带隙光伏材料。介绍了β-FeSi_2薄膜基本结构及其光电特性,分析了国内外关于β-FeSi_2薄膜光伏材料和器件的研究现状,指出了目前该领域研究中存在的问题和发展趋势,给出了在这方面取得的初步研究结果。

Environment-friendly semiconductor β-FeSi2 thin film is regarded as a novel photovoltaic material for its high optical absorption coefficient, 0.89 eV direct bandgap energy, abundant raw material and good chemical stability. Current status at home and abroad is presented, and the fundamental optoelectrical properties and structural characteristics of β-FeSi2 thin film are introduced. The research and development of β-FeSi2-based thin film solar cells is also demonstrated. In the end recent research results on β-FeSi2 as a photovoltaic material are presented.