PI/介孔氧化硅复合材料的制备与性能研究

STUDY ON PREPARATION AND PERFORMANCES OF POLYIMIDE/MESOPOROUS SILICA COMPOSITES

通过四乙氧基硅烷的水解、缩合制备八(四甲基铵)倍半硅氧烷(TMA-POSS),以TMA-POSS为硅源,十六烷基三甲基溴化铵(CTAB)为模板剂,制备了六方有序纳米介孔氧化硅。采用原位聚合法制备了聚酰亚胺(PI)/介孔氧化硅复合材料,并讨论了介孔氧化硅的含量对PI材料的介电常数和热稳定性的影响。结果表明,加入介孔氧化硅有利于降低PI的介电常数和提高热稳定性,当其质量分数为5%时,PI/介孔氧化硅复合材料的介电常数可降至2.69。

Octa（tetramethylammonium）-polyhedral oligomeric silsesquioxane （TMA-POSS） was synthesized by the hydrolysis and condensation of tetraethoxysilane. The mesoporous silica with well-ordered hexagonal pore structure was prepared using TMAPOSS as the silicon source and hexadecyhriethylammoninm bromide（CTAB） as the template. Polyimide/mesoporous silica composites were prepared by in-situ polymerization. The effects of mesoporous silica content on the dielectric constant and thermal stability of polyimide were discussed. The results showed that the addition of mesoporous silica was propitious to reduction in dielectric constant and improvement in thermal stability for PI composites. The dielectric constant of the composite could be reduced to 2.69 by incorporating 5% mesoporous silica.