摘要
采用２０ｋｅＶＮ＋注入固态甘氨酸（Ｇｌｙ）薄膜。对注入样品的ａ粒子透射能谱以及样品溶于水后溶液的电导率和氨基含量的测量，揭示了低能离子注入的损伤作用具有饱和性。ＸＰＳ测量表明低能Ｎ＋注入Ｇ１ｙ后形成了多种损伤产物，其中Ｃ、Ｎ元素的结合能变化较大，而Ｏ元素所处的化学环境变化很小。
Solid state glycine(Gly) films were implanted with 20 keV N+ ions. Then theinduced damages were studied by the measurements of electric conductivity, aminocontent in aqueous solution and α- particle transmission spectra. It is shown thatthe amount of damage products increases with increasing implantation dose and thendecreases after reaching a peak. The XPS data revealed that several damage productswere formed in which C and N elements have different binding energies that those inunimplanted glycine.
出处
《核技术》
EI
CAS
CSCD
北大核心
1998年第8期465-469,共5页
Nuclear Techniques
关键词
离子注入
注入损伤
甘氨酸
低能氮离子
生物分子
Ion implantation, Implantation-induced damage, Glycine, Low energy heavy ions
