低压低功耗混频器的设计

Design of high-gain And Low-power CMOS LNA

本文对常见的混频器结构进行了调整,提出了一种新的混频器结构——低压低功耗混频器,分别降低了跨导级、本振级与输出负载正常工作时所消耗的直流电压降,从而达到降低电源电压的目的。采用1.5VTSMC0.35μmCMOS工艺进行仿真,该混频器仿真结果表明,电路转换增益为-10.5dB,噪声系数为20.648dBm,1dB压缩点为-5.764dBm,三阶输入交调点为4.807dBm。

In this paper we adjust the common structure of mixer and propose a new kind of mixer structure--Low-vohage and low-power mixer. In this contructure we reduce the direct-current voltage dissipation during the working of transconductance level, local oscillation level and the output load, which can achieve the requirement of lower supply voltage. We use the process of 1.5V TSMC0.35μm CMOS to run the simulation, and the result shows that the gain of circuit switching is -10.5dB, the noise factor is 20.648dBm, ldB compression point is -5.764dBm, and the input-referred third-order intercept point is 4.807dBm.