离子注入制备Si基GaSb量子点

Fabrication of GaSb Quantum Dots on Si Substrate by Ion Implantation

利用离子注入法在Si(001)衬底上先后注入了Ga+和Sb+,注入能量分别为140,220 keV,注入剂量分别为8.2×1016,6.2×1016cm-2,然后对样品分别经过一次退火和二次退火处理制备出了量子点材料.用透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)观察了退火后量子点截面像.实验结果表明,经二次退火生长的量子点晶格结构和Si衬底损伤的修复要明显优于一次退火.

Silicon （001） slice was implanted by Ga^＋ and Sb ^＋ at 140 and 220 keV with doses of 8.2×10^16 and 6.2 ×10^16cm^-2 respectively. Then the quantum dot material was fabricated with subsequently once annealing and twice annealing treatment. The implanted subsequent annealed samples were observed using a transmission electron microscope （TEM） and a high resolution transmission electron microscope （HRTEM）. The TEM images show that the crystal lattice of the dots and the repairing of the damaged substrate of the samples which experience twice annealing are better than that of the samples which experience the once annealing.