透明导电ZnO∶In薄膜光电性能的研究进展

Research Advances of Opto-electrical Properties of Transparent Conductive ZnO∶In Films

本征ZnO是高阻材料,如何对其进行掺杂,提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。从晶体结构和能带结构、影响光电性能的因素、透明导电机制、提高光电性能的途径等方面综述了In掺杂ZnO(ZnO∶In)薄膜光电性能的研究进展,提出了降低ZnO∶In薄膜电阻率和提高透光率的有效途径,并对未来的发展方向进行了简要说明。

Undoped ZnO films exhibits high resistivity, thereby, how to enhance its electrical and optical properties by doping is a key for its application. In present paper, the recent progress of the studies on In-doped ZnO （ZnO ： In） thin films based on its crystallinity structure, band structure, conductiving mechisium and the factors to affect the opto-eleetrical properties of the films are summarized. The ways to decrease the resistivity and enhance the transmittance of ZnO ： In thin film are the direction of the future development are proposed briefly.