碳化硅纳米线的湿腐蚀研究

Studies on Wet Chemical Etching of Silicon Carbide Nanowires

使用湿腐蚀法即氢氟酸和硝酸的混合酸(体积比为3:1),于100℃对所制备的具有周期性孪晶结构的碳化硅纳米线进行腐蚀,采用SEM、HRTEM、FTIR、PL对所得的样品进行表征,并讨论了纳米线腐蚀的反应机理。结果表明,混合酸对具有周期性孪晶结构纳米线的腐蚀具有选择性,形成了不同于原材料的特殊形貌。同时,腐蚀改变了纳米线的光致发光性能。

Periodically twinned silicon carbide nanowires are etched at 100℃ by the wet chemical etching in which hydrofluoric and nitric acids （3 ： 1 volume ratio） are used. The SiC samples are characterized by SEM, HR- TEM, FTIR,PL and the reaction mechanism is discussed simply. The results show that the periodically twinned SiC nanowires may be etched selectively by using the mixture acid. Selective etching occurrs at different parts of the nanowires and then results in the special morphology. The photol chemical etching. characteristic is changed by the wet