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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 被引量:3

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
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摘要 A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第8期47-51,共5页 半导体学报(英文版)
基金 supported by the Space Agency of China and the Chinese Academy of Sciences
关键词 chemical etching etch pit defect growth striations CONVECTION chemical etching etch pit defect growth striations convection
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  • 1Ohno H. Properties of ferromagnetic III-V semiconductors. J Magn Mater, 1999, 200:110.
  • 2Matsukura F, Abe E, Ohno H. Magnetotransport properties of (Ga, Mn)Sb. J Appl Phys, 2000, 87:6442.
  • 3Sestakova V, Hubik P, Stepanek B, et al. GaSb single crystals doped with manganese. J Cryst Growth, 1993, 132:345.
  • 4Adlaikari T, Basu S. Electrical properties of gallium manganese antimonide: a new diluted magnetic semiconductor. Jpn J Appl Plays, 1994, 33:4581.
  • 5Serebryakov Y A, Prokhorov I A, Vlasov V N, et al. Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions. J Cryst Growth, 2007, 304:11.
  • 6Dutta P S, Bhat H L, Kumar V. The physics and technology of gallium antimonide: an emerging optoelectronic material. J Appl Phys, 1997, 81:5821.
  • 7Clawson A R. Guide to references on III-V semiconductor chemical etching. Mater Sci Eng R, 2005, 31:1.
  • 8Muller G, Ostrogorsky A. Convection in melt growth. In: Hurle D T J. Handbook of crystal growth. Chap 13. Amsterdam: Elsevier, 1993.
  • 9Glazov V M, Chizhevskaya S N, Glagoleva N N. Liquid semiconductors. New York: Plenum Press, 1969.
  • 10Croll A, Kaiser T, Schweizer M, et al. Floating-zone and floating-solution-zone growth of GaSb under microgravity. J Cryst Growth, 1998, 191:365.

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