摘要
测量了不同电腐蚀条件下制备的多孔硅／硅光伏谱，推导了带隙参数的计算公式．表面光伏谱测量计算值与光致发光的实验结果基本一致．
The photovoltaic spectra of porcous silicon/silicon fabricated by different electrochemical etching conditions are measured. The calculated formulae of energy gap are drived. The energy gaps are calculated by surface photovltaic spectra. The results basically agree with that measured by photoluminescence.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1998年第4期513-516,共4页
Journal of Xiamen University：Natural Science
基金
国家与福建省自然科学基金
关键词
半导体
多孔硅
光伏谱
带隙参数
能带结构
Porous silicon, Photovoltaic spectra, Parameter of energy gap
